BLM3050K pb free product n-channel enhancement mode power mosfet description the BLM3050K uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features v ds =30v,i d =50a r ds(on) < 11m ? @ v gs =10v r ds(on) < 16m ? @ v gs =5v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits uninterruptible power supply 100% uis tested! schematic diagram marking and pin assignment to-252-2l top view package marking and ordering information device marking device device package reel size tape width quantity 3050k BLM3050K to-252-2l - - - absolute maximum ratings (tc=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v drain current-continuous i d 50 a drain current-continuous(t c =100 ) i d (100 ) 35 a pulsed drain current i dm 140 a maximum power dissipation p d 60 w derating factor 0.4 w/ single pulse avalanche energy (note 5) e as 70 mj operating junction and st orage temperature range t j ,t stg -55 to 175 page1 www.belling.com.cn v2.0
BLM3050K pb free product thermal characteristic thermal resistance,junction-to-case(note 2) r jc 2.5 /w electrical characteristics (tc=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 33 - v zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1 1.6 3 v v gs =10v, i d =25a - 8 11 drain-source on-state resistance r ds(on) v gs =5v, i d =20a - 10 16 m ? forward transconductance g fs v ds =5v,i d =20a 15 - - s dynamic characteristics (note4) input capacitance c lss - 2000 - pf output capacitance c oss - 280 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 160 - pf switching characteristics (note 4) turn-on delay time t d(on) - 10 - ns turn-on rise time t r - 8 - ns turn-off delay time t d(off) - 30 - ns turn-off fall time t f v dd =15v,i d =20a v gs =10v,r gen =1.8 ? - 5 - ns total gate charge q g - 23 - nc gate-source charge q gs - 7 - nc gate-drain charge q gd v ds =10v,i d =25a, v gs =10v - 4.5 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =25a - 0.85 1.2 v diode forward current (note 2) i s - - 40 a reverse recovery time t rr - 22 35 ns reverse recovery charge qrr tj = 25c, if = 40a di/dt = 100a/ s(note3) - 12 20 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition tj=25 , v dd =15v,v g =10v,l=1mh, rg=25 ? page2 www.belling.com.cn v2.0
BLM3050K pb free product test circuit 1 e as test circuits 2 gate charge test circuit: 3 switch time test circuit page3 www.belling.com.cn v2.0
BLM3050K pb free product typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance normalized i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) page4 www.belling.com.cn v2.0
BLM3050K pb free product vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area c capacitance (pf) normalized bvdss t j -junction temperature( ) figure 9 bv dss vs junction temperature i d - drain current (a) t j -junction temperature( ) figure 10 v gs(th) vs junction temperature r(t),normalized effective transient thermal im p edance square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance page5 www.belling.com.cn v2.0
BLM3050K pb free product to-252-2l package information page6 www.belling.com.cn v2.0
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